hd zc 72 1 h igh diode semiconductor features i o 5.0a vrrm high surge current capability applications rectifier marking polarity: color band denotes cathode SB5100L do-2 7 do-27 plastic-encapsulate diodes schottky rectifier 100v low vf SB5100L item symbol unit conditions sb5 repetitive peak reverse voltage v rrm v average forward current i f(av) a 60hz half-sine wave, 5.0 i fsm a 150 junction temperature t j -55~+150 storage temperature t stg electrical characteristics (t a =25 unless otherwise specified item symbol unit test condition sb5 peak forward voltage v f v peak reverse current i rrm1 ma v rm =v rrm t a =25 i rrm2 t a =100 thermal resistance(typical) r j-a /w between junction and ambient 42 r j-l between junction and lead 8 100 100l 100l 0.6 resistance load, tl= 60hz half-sine wave,1 cycle, ta=25 surge(non-repetitive)forward current =5a t a =25 -55~+150 i f 100 0.5 max i mum r m s vo ltage v rms v 70 10
typical characteristics 2 h igh diode semiconductor 0 50 150 fig.1: forward current derating curve io(a) tl( ) 100 0 25 75 125 5.0 4.0 3.0 2.0 1.0 ifsm(a) number of cycles fig.2: maximum non-repetitive forward urge current 150 120 90 60 30 0 1 10 100 8.3ms single half sine-wave (jedec method) 6.0 fig.4 typical reverse characteristics voltage(%) ir(ma) t a = 150 c t a = 125 c t a = 25 c 100 10 1 0.1 0.01 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.2 0.5 vf(v) if(a) fig3:instantaneous forward voltage 1.0 10 20 40 5.0 ta=25 0.8 0.9 1.0 0.1 0 60 1.1 1.2
3 h igh diode semiconductor do-2 7 unit: in inches (millimeters) min .375(9.50) .335(8.50) .052(1.30) .044(1.10) .220(5.60) .197(5.00) 0.96(24.5) min 0.96(24.5)
4 h igh diode semiconductor ammo box packaging specifications for axial lead rectifiers
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